Together with the Research and Development Division of the Furukawa Company Group, the Nitride Semiconductors Department, we have been working on commercializing gallium nitride substrates. Our high-quality gallium nitride substrates are made by the HVPE method. As they have low dislocation density, they are the best materials for blue-violet laser diodes or wafers for highly-bright white LEDs.
Gallium Nitride Substrates
Gallium nitride (GaN) substrates are gaining attention as materials for blue-violet laser diodes or highly-bright white LEDs and we are working on the development toward mass-production.
